1,1,3,3-Tetramethyl-1,3-diphenyldisilazane - CAS 3449-26-1
Catalog number: 3449-26-1
Category: Main Product
Molecular Formula:
C16H23NSi2
Molecular Weight:
285.53
COA:
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Purity:
95%
Synonyms:
1,3-Diphenyl-1,1,3,3-tetramethyldisilazane, DPTMDS
MSDS:
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Quantity:
Data not available, please inquire.
Boiling Point:
96-100ºC0.1 mm Hg(lit.)
Density:
0.985 g/mL at 25ºC(lit.)
InChIKey:
HIMXYMYMHUAZLW-UHFFFAOYSA-N
InChI:
InChI=1S/C16H23NSi2/c1-18(2,15-11-7-5-8-12-15)17-19(3,4)16-13-9-6-10-14-16/h5-14,17H,1-4H3
Canonical SMILES:
C[Si](C)(C1=CC=CC=C1)N[Si](C)(C)C2=CC=CC=C2
1.Carburization of tungsten filaments in a hot-wire chemical vapor deposition process using 1,1,3,3-tetramethyl-1,3-disilacyclobutane.
Tong L1, Shi YJ. ACS Appl Mater Interfaces. 2009 Sep;1(9):1919-26. doi: 10.1021/am900329q.
The alloying of tungsten filament when using 1,1,3,3-tetramethyl-1,3-disilacyclobutane (TMDSCB) in a hot-wire chemical vapor deposition reactor was systematically studied by scanning electron microscopy, Auger electron spectroscopy, analysis of the power consumed by the filament, and in situ mass spectrometric measurements of the gas-phase species produced in the process. Only carburization of the W filament was observed. The carburization is mainly caused by the interaction of methyl radicals with the filament. Graphite as well as both WC and W2C alloys can form on the filament surface, depending on the filament temperatures and source gas pressures. Both WC and graphite are converted to W2C with the diffusion of C into the filament. It is shown that filament carburization affects the consumption rate of the source gas and the intensities of gas-phase reaction products. Gas-phase reactions dominate at T < or = 1400 degrees C. The carburization rate increases with increasing filament temperatures and dominates at T > or = 1800 degrees C.
2.Decomposition of 1,1-dimethyl-1-silacyclobutane on a tungsten filament--evidence of both ring C-C and ring Si-C bond cleavages.
Tong L1, Shi YJ. J Mass Spectrom. 2010 Feb;45(2):215-22. doi: 10.1002/jms.1712.
The decomposition of 1,1-dimethyl-1-silacyclobutane (DMSCB) on a heated tungsten filament has been studied using vacuum ultraviolet laser single photon ionization time-of-flight mass spectrometry. It is found that the decomposition of DMSCB on the W filament to form ethene and 1,1-dimethylsilene is a catalytic process. In addition, two other decomposition channels exist to produce methyl radicals via the Si-CH(3) bond cleavage and to form propene (or cyclopropane)/dimethylsilylene. It has been demonstrated that both the formation of ethene and that of propene are stepwise processes initiated by the cleavage of a ring C-C bond and a ring Si-C bond, respectively, to form diradical intermediates, followed by the breaking of the remaining central bonds in the diradicals. The formation of ethene via an initial cleavage of a ring C-C bond is dominant over that of propene via an initial cleavage of a ring Si-C bond. When the collision-free condition is voided, secondary reactions in the gas-phase produce various methyl-substituted 1,3-disilacyclobutane molecules.
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CAS 3449-26-1 1,1,3,3-Tetramethyl-1,3-diphenyldisilazane

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